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1 IPA50R190CE rev.2.4,2016-07-12 final data sheet pg-to220fp mosfet 500vcoolmosacepowertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforstandardgradeapplications applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 550 v r ds(on),max 0.19 w i d 24.8 a q g.typ 47.2 nc i d,pulse 63 a e oss @400v 4.42 j type/orderingcode package marking relatedlinks IPA50R190CE pg-to 220 fullpak 5r190ce see appendix a d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
2 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
3 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 24.8 15.7 a t c = 25c t c = 100c pulsed drain current 2) i d,pulse - - 63 a t c =25c avalanche energy, single pulse e as - - 339 mj i d =7.7a; v dd = 50v avalanche energy, repetitive e ar - - 0.51 mj i d =7.7a; v dd = 50v avalanche current, repetitive i ar - - 7.7 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...400v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power dissipation (full pak) p tot - - 32 w t c =25c operating and storage temperature t j , t stg -40 - 150 c - mounting torque - - - 50 ncm m2.5 screws continuous diode forward current i s - - 8.1 a t c =25c diode pulse current 2) i s,pulse - - 63.0 a t c = 25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c, t cond <2 m s maximum diode commutation speed 3) di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c, t cond <2 m s insulation withstand voltage for to-220fp v iso - - 2500 v v rms , t c =25c, t =1min 2thermalcharacteristics table3thermalcharacteristicsto-220fullpak values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 3.9 c/w - thermal resistance, junction - ambient r thja - - 80 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s 1) limited by t j max <150c, maximum duty cycle d = 0.5, to220 equivalent 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
4 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 500 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 2.50 3 3.50 v v ds = v gs , i d =0.51ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =500v, v gs =0v, t j =25c v ds =500v, v gs =0v, t j =150c gate-source leakage curent i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.17 0.45 0.19 - w v gs =13v, i d =6.2a, t j =25c v gs =13v, i d =6.2a, t j =150c gate resistance r g - 3 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 1137 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 68 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 56 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 251 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 9.5 - ns v dd =400v, v gs =13v, i d =7.7a, r g =3.4 w rise time t r - 8.5 - ns v dd =400v, v gs =13v, i d =7.7a, r g =3.4 w turn-off delay time t d(off) - 54 - ns v dd =400v, v gs =13v, i d =7.7a, r g =3.4 w fall time t f - 7.5 - ns v dd =400v, v gs =13v, i d =7.7a, r g =3.4 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 6.1 - nc v dd =400v, i d =7.7a, v gs =0to10v gate to drain charge q gd - 24.5 - nc v dd =400v, i d =7.7a, v gs =0to10v gate charge total q g - 47.2 - nc v dd =400v, i d =7.7a, v gs =0to10v gate plateau voltage v plateau - 5.4 - v v dd =400v, i d =7.7a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v (br)dss 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to80%v (br)dss d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
5 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.85 - v v gs =0v, i f =7.7a, t f =25c reverse recovery time t rr - 280 - ns v r =400v, i f =7.7a,d i f /d t =100a/s reverse recovery charge q rr - 3.2 - c v r =400v, i f =7.7a,d i f /d t =100a/s peak reverse recovery current i rrm - 21.5 - a v r =400v, i f =7.7a,d i f /d t =100a/s d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
6 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet 4electricalcharacteristicsdiagrams powerdissipation t c [c] p tot [w] 0 40 80 120 160 0 10 20 30 40 50 p tot =f( t c ) max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
7 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet typ.outputcharacteristicstj=25c v ds [v] i d [a] 0 5 10 15 20 0 10 20 30 40 50 60 70 80 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs typ.outputcharacteristicstj=125c v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 25 30 35 40 45 50 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 10 20 30 40 50 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 98% typ r ds(on) =f( t j ); i d =6.2a; v gs =13v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
8 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 0 10 20 30 40 50 60 70 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j typ.gatecharge q gate [nc] v gs [v] 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 400 v 120 v v gs =f( q gate ); i d =7.7apulsed;parameter: v dd avalancheenergy t j [c] e as [mj] 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360 e as =f( t j ); i d =7.7a; v dd =50v drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 440 460 480 500 520 540 560 580 v br(dss) =f( t j ); i d =1ma d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
9 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0 1 2 3 4 5 6 7 e oss = f (v ds ) forwardcharacteristicsofreversediode v sd [v] i f [a] 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 10 2 125 c 25 c i f =f( v sd );parameter: t j d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
10 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
11 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet 6packageoutlines figure1outlinepg-to220fullpak,dimensionsinmm/inches d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00181328 2.5 revision 01 29-04-2016 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.047 0.092 0.394 0.503 0.118 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 1.20 15.67 0.40 0.65 10.00 2.83 3.15 3.00 12.78 8.97 3 29.75 0.90 0.63 1.50 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.80 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.110 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.047 1.20 1.50 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs.
12 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet 7appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00181328 2.5 revision 01 29-04-2016 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.047 0.092 0.394 0.503 0.118 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 1.20 15.67 0.40 0.65 10.00 2.83 3.15 3.00 12.78 8.97 3 29.75 0.90 0.63 1.50 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.80 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.110 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.047 1.20 1.50 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs.
13 500vcoolmosacepowertransistor IPA50R190CE rev.2.4,2016-07-12 final data sheet revisionhistory IPA50R190CE revision:2016-07-12,rev.2.4 previous revision revision date subjects (major changes since last revision) 1.0 2011-06-07 release of final data sheet 2.0 2011-06-08 release of final data sheet 2.1 2011-06-16 release of final data sheet 2.2 2015-08-21 change to standard grade qualification 2.3 2016-06-10 updated id ratings, package marking code & package drawing 2.4 2016-07-12 changed marking information in page 1 trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00181328 2.5 revision 01 29-04-2016 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.047 0.092 0.394 0.503 0.118 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 1.20 15.67 0.40 0.65 10.00 2.83 3.15 3.00 12.78 8.97 3 29.75 0.90 0.63 1.50 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.80 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.110 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.047 1.20 1.50 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs.

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